BSS670S2L H6327 MOSFET N-Ch 55V 540mA SOT-23-3

Manufacturer: Infineon
Product category: MOSFET
Technology: si
Installation style: SMD/SMT
Package/box: SOT-23-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 55 V.
Id- continuous drain current: 540 mA
Rds On- drain-source on resistance: 346 mOhms.
Vgs-gate-source voltage: - 20 V,+20 V
Vgs th- gate-source threshold voltage: 1.2 v.
Qg- gate charge: 1.7 nC
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 360 mW
Channel mode: Enhancement
Qualification: AEC-Q100
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Infineon Technologies
Configuration: Single
Descending time: 24 ns
Forward transconductance-min: 600 mS
Height: 1.1 mm
Length: 2.9 mm
Product type: MOSFETs
Rise time: 25 ns
Series: BSS670S2
Subcategory: Transistors
Transistor type: 1 N-Channel
Typical closing delay time: 21 ns
Typical turn-on delay time: 9 ns
Width: 1.3mm
Part number alias: sp000928950bss67s2lh6327xtbss670s2lh6327xtsa1.
Unit weight: 8 mg

BSS670S2L H6327.pdf

smd bias resistor transistor

smt bias resistor transistor

BSS670S2L H6327 MOSFET N-Ch 55V 540mA SOT-23-3 Images